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SKU:14296071698
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cm
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) N-type Undoped, 2" dia x 0.5 mm, 1SP, R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: > 50Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) EPD: < 5E2 cm^2 Package: under 1000 class clean room Typical Properties:
Thickness 58 um
Thickness: 0
Limit: 70 centigrade
Surface finish (RMS or Ra) : < 30A
Click to learn more at MTI Gas Related page
Current Collector (Substrate) Aluminum foil Cathode material LiNiCoMnO2 Dimensions 670mm(L) x 56mm(W) x 0
Polishing: single side polished
Please choose the sintered diamond blade at the related product below
It's normal that the target pressure decreases a little bit during the pressure holding time
Ball mill or ground the powder to the size of 32~75 microns powder before pressing
Excellent for any type of tubing: ceramic
strong acid and alkaline
Quick Dispatch:
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- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
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