SKU:74905466004
20 N 60 600V 20A <0.45E P-MOSFET
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
20 N 60 600V 20A <0.45E P-MOSFETThe 20 N 60 600V 20A <0. 45E (B) MFET is a high performance metal oxide semiconductor field effect transistor (MFET) for industrial use. With a voltage rating of 600V and a current capacity of 20A, it provides effective power management. The transistor is exceptionally reliable, with an on resistance of less than 0. 45 ohms. Features: Drain Current ID= 20A@ TC=25 Drain Source Voltage: VDSS= 600V(Min) Low ON Resistance RDS(on) = 0. 45(Max) Fast
AC/DC current and voltage diagnostics
IC ULN 2003
electronics prototyping board
power electronics
40x Male to Male Jumper Wires
RMS Power Dissipation: 300mV
Brand: Hard Gear
Internally Set Current Limit without a Current Sensing Resistor
Sculptured for firm grip
Package Contents: 1 3d Printer
Sensors: 9 axis IMU (accel
The HT9170B and HT9170D types supply power-down mode and inhibit mode operations
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